Foundry Services

ams OSRAM 0.35 μm and 180 nm
PROTOTYPING AND VOLUME PRODUCTION

Through EUROPRACTICE-IC, customers from academia and industry can gain access to Multi-Project-Wafer runs and Volume Production services of ams.

The ams state-of-the-art 8-inch fab is offering high-performance process technologies with more than 30 years of experience in wafer processing. The PDK (Process Design Kit) provides all building blocks required to create complex analog mixed-signal designs.

The ams 0.35 µm and 180 nm technologies with standard CMOS, HV, SiGe and Opto Process, fabricated in Austria, offer affordable and easy access to prototyping and small volume services for academia and industry.

GLOBALFOUNDRIES 130, 55, 45, 40, 28, 22, 12 nm
PROTOTYPING AND VOLUME PRODUCTION

Through EUROPRACTICE-IC, customers from both academic and private sectors can access Multi-Project-Wafer and Volume Production services of GLOBALFOUNDRIES.

GLOBALFOUNDRIES, is a leading specialty foundry with a broad range of platforms and features, such as RF CMOS, FDSOI, RFSOI, SiGe, FinFET, SiPhotonics. Technology nodes are ranging from 350 nm down to 12 nm. Globalfoundries’ 22nm and 28nm nodes are fabricated in Dresden, Germany.

The GLOBALFOUNDRIES 22FDX^® employs 22 nm Fully Depleted Silicon-On-Insulator (FD-SOI) technology that delivers outstanding performance at extremely low power with the ability to operate at 0.4V ultra-low power and at 1pA per micron for ultra-low standby leakage.

IHP 0.25 and 0.13 μm
PROTOTYPING AND VOLUME PRODUCTION

EUROPRACTICE-IC provides access to IHP SiGe:C BiCMOS Technologies for Multi-Project-Wafer Prototyping and Small Volume Production.

IHP offers research partners and industrial customers worldwide access to its powerful SiGe:C BiCMOS technologies. Several generations of high-speed SiGe Hetero-junction Bipolar Transistors (HBT) have been developed and integrated in 0.25 μm and 0.13 μm BiCMOS technologies.

The 0.13 μm BiCMOS process SG13G3Cu represents the fastest currently available SiGe HBT technology featuring peak fT / fmax values of 500 GHz / 700 GHz. These IHP technologies are especially suited for applications in the higher GHz bands, e.g. for telecommunications & broadband, radar and more.  

G25H5_EPIC is the monolithic integration of photonic devices, such as detectors and modulators, in the frontend of a Si-based integrated circuit technology that allows shortest interconnects between photonics and electronics, from which high-speed performance of Electronic-Photonic Integrated Circuits (EPIC) greatly benefit. This technology is especially suited for Optical Transceivers for 100G / 200G / 400 GHz applications.

X-FAB 0.35, 0.18, 0.13 μm
PROTOTYPING AND VOLUME PRODUCTION

EUROPRACTICE-IC offers Multi-Project-Wafer and Volume Production services of X-FAB to academic institutions togetherwith small and medium-sized enterprises.

X-Fab is a leading foundry group for analog/mixed-signal semiconductor applications, with six manufacturing sites in Germany, France, Malaysia and the USA. X-FAB has a combined capacity of around 94,000 eight-inch equivalent wafer starts per month.

Technologies are ranging from 1.0 to 0.13 µm mixed-signal CMOS, special SOI and MEMS long lifetime processes for automotive, industrial, medical and other applications

Fraunhofer IISB offers early-access to its 2µm SiC CMOS technology including NMOS and PMOS transistors as well as passive components and pn-diodes for integrated circuits. These circuits are capable of operating at temperatures above 300 °C (up to approx. 600 °C). Additional process modules are available for high-voltage devices, isolated transistors and SiC device templates exceeding CMOS circuits.
The targeted applications for this technology include integrated circuits beyond silicon for extremely harsh environments including high temperatures and radiation levels with low leakage. Additionally, the technology can be tailored to obtain specialized optical SiC devices and quantum sensor templates.

UMS offers high-perfomance 0.25μm GaN high-electron-mobility-transistor (HEMT), 0.15μm GaN HEMT and 0.1μm GaAs Low Noise pHEMT processes.

GH25 is a space evaluated 0.25 μm HEMT GaN-on-SiC substrate technology for very high-power application. With GH25 it is possible to design GaN HPAs, LNAs, switches, diodes, MMICs, power bars and multi-function components.

GH15 is a 0.15μm HEMT GaN-on-SiC substrate technology for very high-power application.  

PH10 PHEMT GaAs process is optimized for the production of low noise, wideband and medium power amplifier MMICs. With PH10 it is possible to design LNAs, variable Gain and Medium Power Amplifiers, mixers and multi-functions TX &RX MMICs, automotive radars, Imaging sensors, Optical fibre communication and Instrumentations.